Formation of vertical graphene on surface of the gallium-arsenide structures
نویسندگان
چکیده
The properties of carbon layers (C-layers) formed by thermal decomposition CCl 4 at temperatures 600-700 o C on the surface gallium arsenide structures fabricated MOC-hydride epitaxy n + -GaAs (100) wafers have been studied. morphology was studied using atomic force microscopy. structural and optical were Raman spectroscopy reflection spectroscopy. It has found that in case a C-layer temperature 650-700 C, microscopy image demonstrates presence vertical nanowalls (vertical graphene) located parallel to one [110] directions GaAs crystal lattice. characteristics bands observed spectra correspond parameters graphene. reflectivity coefficient such significantly decreases (diffuse does not exceed 25% for layer 700 C) wavelength range from 0.19 1.8 μm. significant "absorbing" ability makes obtained promising as conducting contact photosensitive semiconductor device structures, which is confirmed preliminary results studies current-voltage spectral dependences photocurrent. Keywords: tetrachloride, arsenide, graphene morphology.
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ژورنال
عنوان ژورنال: Fizika tverdogo tela
سال: 2023
ISSN: ['0367-3294', '1726-7498']
DOI: https://doi.org/10.21883/pss.2023.04.56009.9